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Process by PbSe thin film deposition reactions by close-spaced vapor transport technique
Kertoatmodjo S.a, Nugrahaa, Guastavino F.b
a Engineering Physics Department, Institute of Technology Bandung, Indonesia
b Université Montpellier II, France
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]A study of the reaction process during PbSe thin film deposition on a glass substrate by a low pressure close-spaced vapor transport (CSVT) technique, using iodine vapor as a transport reagent, has been conducted. Chronological stages of the process reaction have been proposed, from which a Pb-liquid mist phase reaction as part of a disproportion toward a PbSe deposition reaction was obtained. In each stage the reaction was under control, and was identified by applying spontaneous reaction criteria in the form of ΔGT – T lines, related to the standard free energy changes of reaction, ΔGT0. The PbSe thin films were characterized by x-ray diffraction, EDS analysis and microstructure-SEM. It was found that crystallinity of the samples without contamination with iodide, PbI2, is obtained at PbSe-source’s temperatures, Tso, with the range from 723 °K to 783 °K in conjunction with substrate temperatures, Tsu, ranging from 673 °K to 753 °K, and for distances between substrate and source: l = 2 to 4 mm.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Closed space vapor transport (CSVT) deposition,Lead selenide[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.4028/www.scientific.net/ssp.67-68.297[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]