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Growth of Pb1-xSnx, Te (x ≈ 0.12) epitaxial layers by temperature difference under controlled vapor pressure liquid-phase epitaxy
Nugrahaa,b, Tamura W.c, Itoh O.a,d, Suto K.a,c, Nishizawa J.-I.a,d
a Telecommunication Adv. Org. of Japan, Sendai Research Center, Japan
b Department of Engineering Physics, Bandung Institute of Technology, Indonesia
c Department of Materials Science, Faculty of Engineering, Tohoku University, Japan
d Semiconductor Research Institute, Japan
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]Pb1-xSnx Te (x ≈ 0.12) liquid-phase epitaxial layers have been grown by the temperature difference method under controlled vapor pressure (TDM-CVP) using Pb solvents on PbTe substrates at temperatures 490°C and 600°C. The grown layers are usually n-type, and the optimum Te vapor pressure where the carrier concentration becomes minimum is 3.1×10-3 > PTe > 1.4×10-3Torr for Tg = 600°C, and 3.1×10-5 > PTe > 1.4×10-5 Torr for Tg = 490°C. The activation energy of the optimum Te vapor pressure for Pb1-xSnxTe (x ≈ 0.12) is 2.38 eV, which is larger than the activation energy for PbTe, 2.12eV. Two different types of etch pits are observed on Pb1-xSnxTe (x ≈ 0.12) layers. The density of the smaller size etch pits tends to become minimum at the optimum Te vapor pressure, while the larger size etch pits are dominantly observed at the vapor pressure region above the optimum vapor pressure. This tendency and lower electron mobility suggest defect aggregation taking place above the optimum vapor pressure. © 2000 Elsevier Science B.V. All rights reserved.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Controlled vapor pressure,Liquid-phase epitaxy,Pb1-xsnxTe,PbTe,TDM-CVP liquid-phase epitaxy[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1016/S0022-0248(00)00586-8[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]