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Physical and pyroelectric properties of tantalum-oxide-doped lead zirconium titanate [Pb0.9950(Zr0.525Ti0.465Ta0.010) O3] thin films and their application for IR sensors
Irzamana, Darvina Y.b, Fuad A.c, Arifin P.d, Budiman M.d, Barmawi M.d
a Department of Physics, FMIPA IPB, Indonesia
b Department of Physics, FMIPA Universitas Negeri Padang, Indonesia
c Department of Physics, FMIPA Universitas Negeri Malang, Indonesia
d Department of Physics, FMIPA ITB, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]Thin films of lead zirconium titanate [PbZr0.525Ti0.475O3 (PZT)] and 1% tantalum-oxide-doped lead zirconium titanate [Pb0.9950(Zr0.525Ti0.465Ta0.010) O3 (PTZT)] deposited on Pt(200)/SiO2/Si (100) using the dc unbalanced magnetron sputtering (DC-UBMS) method have been investigated. The films were grown at deposition temperatures in the range of 300°C to 750°C for 3 hours, followed by annealing at 700°C for 1 hour for each deposited film. Observations by X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to characterize the physical and pyroelectric properties of the grown films. The films show tetragonal structure with preferred orientation to the (100) and (200) crystal planes. The calculated lattice constants are: a = b = 4.056 Å, c = 4.105 Å for PZT thin film; and a = b = 4.056 Å, c = 4. 068 Å for PTZT thin film. The physical properties extracted from the I-V curves show that the PZT and PTZT films are insulator or dielectric materials. The conductivity (σ) of PZT films is between 2.24 × 10-13 (Ω m)-1 and 5.00 × 10-12 (Ω m)-1, whereas the conductivity (σ) of PTZT films is between 1.02 × 10-9 (Ω m)-1 and 1.90 × 10-8 (Ω m)-1 for films deposited at the temperature ranges mentioned. The voltage responsivity (rv) measured at chopper frequency of 2000 Hz and at wavelength of 947 nm is 62.1-80 μV/W and 61-76.4 μV/W for PZT and PTZT thin films, respectively. Meanwhile, the pyroelectric coefficient (p) is in the range of 9.54 × 10-4 to 12.3 × 10-4 C/m2 K for PZT thin films and 9.35 × 10-4 to 11.7 × 10-4 C/m2 K for PTZT thin films. These results show that PZT and PTZT thin films are suitable for use as a pyroelectric infrared sensor.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Infrared sensor,Lead zirconium titanate,Tantalum oxide[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1002/pssa.200306677[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]