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A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN grown on silicon
Lee Y.C.a, Hassan Z.a, Yam F.K.a, Abdullah M.J.a, Ibrahim K.a, Barmawi M.b, Sugiantob, Budiman M.b, Arifin P.b
a School of Physics, Universiti Sains Malaysia, Malaysia
b Lab. of Electronic Materials Physics, Department of Physics, Institute Technology Bandung, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]We report on the characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN films grown on silicon substrates by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) at growth temperature of 200 and 600°C. Structural analysis of the GaN samples used for the photodiodes fabrication were performed by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and energy dispersive X-ray analysis (EDX) to analyze the crystalline quality of the samples. The analysis has revealed that the GaN samples grown at 200 and 600°C were in amorphous and microcrystalline phase, respectively. Electrical characterization of the MSM photodiodes were carried out by using current-voltage (I-V) measurements. At 10 V, the photodiodes based on amorphous GaN has a dark current of 0.18 μA while the microcrystalline GaN based photodiode has a dark current of 18 μA. © 2004 Elsevier B.V. All rights reserved.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Crystalline structures,Electrical characterization,III-V nitrides,Metal-semiconductor-metal (MSM) photodiodes[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Crystalline structure,Electrical characterization,III-V nitrides,Photodiodes[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text]This work was conducted under AUN/SEEDNet and IRPA RMK-8 Strategic Research grant. The authors wish to thank M.E. Kordesch (Ohio University) and Spire Corporation for providing the samples in our study. The support from Universiti Sains Malaysia is gratefully acknowledged.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1016/j.apsusc.2004.11.063[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]