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Microstructure and optical properties of AlxGa 1-xN/GaN heterostructure thin films grown on Si(111) substrate by plasma assisted metalorganic chemical vapor deposition method
Sutanto H.a,b, Subagio A.a,b, Supriyanto E.a,c, Arifin P.a, Budiman M.a, Sukirnoa, Barmawi M.a
a Laboratory of Electronic Material Physics, Bandung Institute of Technology, Bandung, Indonesia
b Department of Physics, Diponegoro University, Semarang Kampus MIPA-UNDIP, Indonesia
c Department of Physics, Jember University, Jl. Kalimantan III/25Kampus, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]Microstructure and optical properties of AlxGa 1-xN/GaN heterostructures thin films grown on Si(111) substrate by Plasma Assisted-Metalorganic Chemical Vapor Deposition (PA-MOCVD) were investigated. The surface morphology and crystal orientation of the films were determined by scanning electron microscope (SEM) and X-ray diffractometer (XRD), respectively. The content of Al in AlxGa1-xN films (x) was determined by means of NIR-UV visible optical reflectance spectroscope. The surface morphology of films depends significantly on the content of Al. Films with higher value of x showed the smaller grain size and the smoother surface. Films with x=0.29 and x=0.36 showed crystal orientation of (1010) plane, while films with x=0.12 have two crystal orientation of (1010) and (1011) planes. The optical reflectance spectra showed that the ordered of oscillation depend on the smoothness of the film surface, while the number of oscillation related to the thickness of films. The calculated band gap was 3.34 eV for GaN and in the range of 3.34 to 6.20 eV for AlxGa1-xN depending on the x values. © 2008 American Institute of Physics.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]AlxGa1-xN/GaN,Crystal structure,MOCVD,Optical reflectance[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1063/1.2906048[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]