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Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD
Arsyad F.S.a,b, Subagio A.a,c, Sutanto H.a,c, Arifin P.a, Budiman M.a, Barmawi M.a, Husein I.d, Jamal Z.A.d
a Laboratory of Electronic Materials Physics, Department of Physics, Institute of Technology Bandung, Indonesia
b Department of Physics, University of Sriwijaya, Indonesia
c Department of Physics, University of Diponegoro, Indonesia
d School of Microelectronic, KUKUM, Malaysia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by atomic force microscope (AFM). The typical average density of the dots is around 4 × 109 cm-2, while the diameter and the height of the dots are approximately 100 and 50 nm, respectively. The density and the size of the dots significantly depend on the dose of TESi. It is found that the growth mode was changed from the two-dimensional step-flow to the three-dimensional island formation by modifying the AlGaN surface energy induced by the deposited Si. © 2006 IEEE.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Growth of GaN,International conferences,Nanoscience and nanotechnology (NST)[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text][(C2H5)4]Si,AFM,GaN quantum dot,PA-MOCVD[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1109/ICONN.2006.340564[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]