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Study of Mn incorporation into GaN:Mn magnetic semiconductor thin films prepared by plasma assisted MOCVD
Mulyanti B.a,b, Subagio A.a,c, Sutanto H.a,c, Arsyad F.S.a,d, Arifin P.a, Budiman M.a, Barmawi M.a
a Laboratory of Electronic Material Physics, Department of Physics, Institute of Technology Bandung, Indonesia
b Department of Electrical Engineering Education, Indonesian University of Education, Indonesia
c Department of Physics, University of Diponegoro, Indonesia
d Department of Physics, University of Sriwijaya, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]The effect of Mn incorporation into GaN:Mn thin films on their structural property, surface morphology and magnetic property are presented. The GaN:Mn thin films were grown by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) using Trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnTc) as a source of Ga, N and Mn, respectively. The grown films have Mn concentration as high as 6.6 %. The maximum Mn concentration that still produces single phase GaN:Mn (0002) depends on growth temperature. The highest concentration of Mn atoms which are incorporated in the wurtzite structure substitutionally is 2.5%. Above this concentration, parts of Mn atoms are incorporated into GaN matrix intertitially. The surface roughness of the films determined from the AFM images show that the film with 6.4 % of Mn has a better surface morphology than that of the film with 6.6 % of Mn. The results of magnetization measurements show hysteresis behavior at room temperature. The maximum of magnetic moment is achieved by the film with Mn concentration of 2.5 %. © 2006 IEEE.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Chemical vapors,Effect of Mn,International conferences,Magnetic (CE),Nanoscience and nanotechnology (NST),Semiconductor thin films,Trimethyl gallium (TMGa)[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]AFM,EDX,GaN:Mn,PA-MOCVD,VSM,XRD[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1109/ICONN.2006.340622[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]