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High mobility and high N concentration of GaNxAs1-x thin films grown by metal organic chemical vapor deposition
Hamidah I.a, Suhandi A.a, Setiawan A.a, Arifin P.b
a Physics Laboratory, Dept. of Mechanical Engineering, Indonesia University of Education, Indonesia
b Lab. For Electronic Material Physics, Dept. of Physics, Bandung Institute of Technology, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]GaNxAs1-x thin films had been successfully grown on semi-insulating GaAs (001) substrates by metal organic chemical vapour deposition (MOCVD) method. The precursors used were trimethylgallium (TMGa), dimethylhydrazine (DMHy), and tris-dimethylaminoarsenic (TDMAAs). GaN xAs1-x thin films of 1.2 – 2.4 μm thick were grown at the total reactor pressure of 50 torr, H2 and N2 flow rate of 300 seem, temperatures range of 560 – 590°C, and the ratio of TDMAAs/TMGa and DMHy/TDMAAs flow rate of 4.5 and 0.8, respectively. The growth rate of GaN xAs1-x thin films are in the range of 0.8 – 1.6 μ/h. The N concentration of GaNxAs1-x thin films was studied by HR-XRD measurements and was calculated using Vegard’s law from symmetric and asymmetric reflection. From this study, it found that the N concentration of GaNxAs1-x thin films were in the range of 4.9 and 5.5%. The measured electron mobility using Hall-van der Pauw method is in order of 3270 and 3380 cm2 V-1 s1 at x = 4.9% and 5.5% respectively.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Asymmetric reflections,Chemical vapour deposition,Concentration of,Dimethylhydrazine,High mobility,Metal organic,Metalorganic chemical vapor deposition,MOCVD,Reactor pressures,Semi-insulating GaAs,Trimethyl gallium,Van der Pauw method,Vegard’s law,XRD measurements[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1109/IPGC.2008.4781475[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]