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Growth of AlxGa1-xN epitaxial thin film on sapphire substrate by plasma assisted metal organic chemical vapor deposition (PA-MOCVD)
Arsyad F.S.a,b, Arifin P.b, Barmawi M.b, Budiman M.b, Sukirnob, Supu A.c
a Department of Physics, Sriwijaya University, Indonesia
b Department of Physics, Laboratories of Electronic Material Physics, Institut Teknologi Bandung, Indonesia
c Department of Physics, FPMIPA, Nusa Cendana University, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]This paper reported the study of growth of AlxGa1-xN thin film on a-plane sapphire substrate using plasma assisted metal organic chemical vapor deposition (PA-MOCVD). We have successfully growth the Al content AlGaN alloys and investigated the influence of TMA/TMAl+TMGa flow rate ratio to their crystal structure and surface morphology. From S EM image and XRD measurement, the AlGaN films grown with TMA/TMAl+TMGa flow rate ratio of 20% have single crystal orientation, homogeneous and smoother surface morphology. From ED X microanalysis results, all of the AlGaN alloys have high Al content. The Al content of the AlGaN alloys with TMA/TMAl+TMGa flow rate ratio of 20%, 30%, and 40% is about x = 0.5, 0.6, and 0.65, respectively and grown at the growth temperature about of 700°C. © 2010 IEEE.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]AlxGa1-xN,EDX,MOCVD,SEM,XRD[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]AlxGa1-xN,EDX,PA-MOCVD,SEM,XRD[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1109/SMELEC.2010.5549448[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]