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GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)
Ramelan A.H.a, Arifin P.b, Goldys E.c
a Research Centre for Smart Materials and Energy, Physics Department, Sebelas Maret University (UNS), Indonesia
b Physics Department, Bandung Institute of Technology (ITB), Indonesia
c Physics Department, Macquarie University, Australia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]Nanostructures have become a topic of increasing interest due to their fundamental properties and possible device applications. One method of fabrication that is receiving much attention lately is the utilization of the coherent Stranski-Krastanov mode which leads to self-assembly of small-scale islands, driven by the lattice mismatch between the quantum dot material and the underlying substrate material [1-5]. W e quantitatively investigate initial stages of growth and evolution of GaSb islands on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD). We pay particular attention to the transition from 2D to 3D growth and to the transition between isolated island growth and the coalescence of islands in an effort to improve our understanding of this regime. The extent of oxidation and growth derived oxygen contamination for GaSb quantum dots grown by metalorganic chemical vapour deposition (MOCVD) were also investigated by X-ray photoelectron spectroscopy (XPS) using a system with high energy resolution. © 2010 IEEE.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]3-D growth,Device application,Fundamental properties,GaAs substrates,High-energy resolution,Initial stages,Isolated islands,Metalorganic chemical vapour deposition,Oxygen contamination,Quantum dot materials,Stranski-Krastanov mode,Substrate material[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1109/ICONN.2010.6045185[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]