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Electron tunnel current through HfO2/SiO2 nanometer-thick layers with a trapped charge: Effects of electron incident angle and silicon substrate orientation
Noor F.A.a, Sahdan M.F.a, Achmari P.a, Iskandar F.a, Abdullah M.a, Khairurrijala
a Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]A model for describing the electron transmittance and tunneling current in anisotropic MOS devices with a high-k dielectric stack is studied by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies. The HfO2/SiO 2 dual ultrathin layer is used as the gate oxide in an n +poly-Si/oxide/Si capacitor. The main problem of using HfO 2 is the charge trapping formed at the HfO2/SiO 2 interface that can influence the performance of the device. In addition, without taking into account the effect of trap, the tunneling current in the n+-poly Si/HfO2/SiO2/Si capacitor is almost zero at low bias voltage regime. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfO 2/SiO2 interface in the electron transmittance and tunneling current. In this paper, the effects of the electron incident angle and silicon substrate orientation on the transmittance and tunneling current are studied by utilizing the developed model. © 2011 American Institute of Physics.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]charge trapping,incident angle,substrate orientation,Transmittance,tunneling current[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1063/1.3667213[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]