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Growth study of wide bandgap a-Si:H and a-SiN:H by PECVD method for application in thin film transistor
Jasruddinb, Wenas W.W.a, Winata T.a, Barmawi M.a
a Laboratory for Electronic Material Physics, Department of Physics, Institut Teknologi Bandung, Indonesia
b Department of Physics, Universitas Negeri Makassar, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]The growth of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiN:H) films was studied by plasma enhanced chemical vapor deposition (PECVD) method. 10% silane (SiH 4) diluted in hydrogen (H 2) gas and 100% ammonia (NH 3) gas were used as gas sources. The optical band-gap and deposition rate of a-Si:H film were found varied from 1.70 to 1.95 eV and 51 to 84 A 0/min, respectivelly, when the SiH 4 gas flow rate varied from 5 to 11 seem. The widest optical bandgap of a-SiN:H films whichis of 3.69 eV and lowest dark conductivity of 1.07×10 -11 Scm -1 were obtained at NH 3 gas fraction of 60% at SiH 4 flow rate 7 seem. It is also shown that wider optical bandgap of a-SiN:H can be obtained at the flow rate of SiH 4 gas of 5 seem where its value reaches 3.97 eV at NH 3 gas fraction of 25%, whilst its dark conductivity reaches lower value of 1.05×l0 -12 Scm -1. The application of the films as an insulator gate in the thin film transistor (TFT) device was also studied. The lowest dark conductivity of the a-SiN:H film resulted in a better device thereshold voltage. © 2000 IEEE.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]a-Si:H,a-SiN:H,Dark conductivity,Gas fraction,Gas sources,Hydrogenated amorphous silicon (a-Si:H),TFT,Wide band gap[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]A-Si:H,A-SiN:H,Dark conductivity,Optical band-gap,TFT[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]