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Raman and photoemission spectroscopy studies on thermal stability of quantum dot consisting of Si clad and Ge Core
a Physics Department, Institut Teknologi Bandung, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]The compositional mixing and crystallinity of Si dots with Ge core (~20 nm in average dot diameter), which were prepared on thermally grown SiO2 by highly selective low-pressure chemical vapor deposition (LPCVD), have been studied as a function of annealing temperatures in the range of 540-1000°C. XPS analysis of annealed single layer structures confirms the incorporation of Ge atoms into Si clad from Ge core and the formation of GeOx at the Si clad surface. Raman scattering spectra of multiply stacked structures consisting of dots with Ge core and 2 nm-thick SiO2 interlayers indicate the compositional mixing occurs partly at Si/Ge interface during the sample preparation, where the sample was heated up to 600°C. Also, 800°C annealing promotes Si-Ge alloying between Si clad and Ge core and degrades the crystallinity. By 950°C annealing, SiO2 reduction with diffused Ge atoms to form volatile GeOx units becomes significant, resulting in the generation of Si-Si bonds. © 2012 by Pan Stanford Publishing Pte. Ltd. All rights reserved.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.4032/9789814364553[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]