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Electron tunneling current in isotropic n+Poly-Si/HfSiOxN/Trap/SiO2/p-Si capacitors: Effect of the depth and width traps and Si orientation
Noor F.A.a, Khairiaha, Abdullah M.a, Khairurrijala
a Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]In this work, we studied electron transmittance and tunneling current in isotropic n+Poly-Si/HfSiOxN/Trap/SiO2/p-Si capacitors by including the coupling effect between transverse and longitudinal kinetic energies represented by an electron velocity in the gate. It was used an HfSiOxN/SiO2 dual ultrathin layer as the gate oxide in an isotropic n+poly-Si/oxide/Si capacitor to replace SiO2. The charge trapping formed at the HfSiOxN/SiO2 interface is the main problem in using HfSiOxN because it can affect the performance of the device. Additionally, the tunneling current in metal-oxide-semiconductor (MOS) capacitor with high-κ dielectric stacks is almost zero at low bias voltage regime without considering the effect of trap. Hence, it is necessary to develop a model of tunneling current with considering the trap effect at the HfSiOxN/SiO2 interface. The transmittance was numerically calculated by employing a transfer matrix method. The transmittance was then applied to calculate tunneling currents in the structure. The effects of the depth and width traps, and the silicon substrate orientation on the transmittance and tunneling current are studied by utilizing the developed model. © 2013 AIP Publishing LLC.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Isotropic masses,Transfer matrix method,Transmittance,Tunneling current[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1063/1.4820308[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]