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Growth of AlxGa1-xN by Plasma assisted MOCVD
Arifin P.a, Sugiantob, Suprianto E.c, Wendri N.d, Sutanto H.e, Budiman M.a, Barmawi M.a
a Laboratory of Electronic Material Physics, Department of Physics, ITB, Bandung, 40132, Indonesia
b Department of Physics, State University of Semarang, Indonesia
c Department of Physics, University of Jember, Indonesia
d Department of Physics, University of Udayana, Indonesia
e Department of Physics, University of Diponegoro, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2002 IEEE.Thin films AlxGa1-xN were grown on (0001) sapphire substrates by Plasma Assisted Metal-organic Chemical Vapor Deposition (PA-MOCVD). Plasma-cracked N2, trimethylaluminum (TMA1) and trimethylgallium (TMGa) were used as nitrogen, aluminum and gallium sources, respectively. The results of Energy Dispersive X-ray (EDX) measurements performed at room temperature yielded the linear dependence of molar fraction of Al (x) on moiar fraction of vapor phase of TMA1/(TMA1 + TMGa). The dependence of the band gap energy on the molar fraction of Al (x) showed quadratic expression, Eg (x)= 3.35 + 1.55x + 1.3 x2 eV. AlxGa1-xN layers with x < 0.34 show n-type conduction with room temperature mobilities in the range of 5 to 10 cm2/V.s, and electron concentrations of 9.0 × 1016 to 1.4 × 1019cm-3.[/vc_column_text][vc_empty_space][vc_separator css=".vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}"][vc_empty_space][megatron_heading title="Author keywords" size="size-sm" text_align="text-left"][vc_column_text]Electron concentration,Energy dispersive x-ray,Linear dependence,N-type conduction,Room temperature mobility,Sapphire substrates,Trimethyl gallium,Trimethylaluminum[/vc_column_text][vc_empty_space][vc_separator css=".vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}"][vc_empty_space][megatron_heading title="Indexed keywords" size="size-sm" text_align="text-left"][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=".vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}"][vc_empty_space][megatron_heading title="Funding details" size="size-sm" text_align="text-left"][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=".vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}"][vc_empty_space][megatron_heading title="DOI" size="size-sm" text_align="text-left"][vc_column_text]https://doi.org/10.1109/COMMAD.2002.1237185[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]