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Plasmon-exciton interaction and screening of exciton in ZnO-based thin film on bulk Pt as analyzed by spectroscopic ellipsometry
Darma Y.a, Satrya C.D.a, Marlina R.a, Kurniawan R.a, Herng T.S.b, Ding J.b, Rusydi A.b
a Department of Physics, Institut Teknologi Bandung, Bandung, 40132, Indonesia
b Singapore Synchrotron Light Source, National University of Singapore, Singapore, 117603, Singapore
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2017 The Japan Society of Applied Physics.We study plasmon-exciton interaction in ZnO-based thin film on bulk Pt by using high resolution spectroscopic ellipsometry. ZnO films on quartz are used as reference. This study shows the strong electronic interactions between ZnO film and Pt by considering the significant suppression of exciton in ZnO film, in comparison to ZnO film on quartz. We found that plasmon in Pt are responsible to provide transferred electron for electronic blocking of exciton in ZnO film induce by spontaneous recombination from Pt. In the case of Cu doped ZnO film, we confirm screening effects on exciton and a localized interband transition for both systems (ZnO film on Pt and ZnO film on quartz). In Cu-doped ZnO film, electronic blocking of exciton by Pt plasmon is more pronounce rather than screening effect by interband transition. Our results show the importance of plasmon from substrate and doping to modify the optical properties of wide bandgap semiconductor.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Cu-doped ZnO,Electronic interactions,High resolution,Inter-band transition,Plasmon-exciton interactions,Screening effect,ZnO films[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text]This work is supported by Singapore National Research Foundation under its Competitive Research Funding (NRFCRP 8-2011-06 and NRF2008NRF-CRP002024), MOEAcRF Tier-2 (MOE2010-T2-2-121), NUS-YIA, and FRC. We also acknowledge support from Desentralisasi Kemenristekdikti 2016 program and Program Riset Unggulan Perguruan Tinggi, ITB 2016 from Indonesian government[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.7567/JJAP.56.01AD06[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]