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Influence of Ti doping on the performance of a ZnO-based photodetector
Nurfani E.a, Zuhairah N.a, Kurniawan R.a, Muhammady S.a, Sutjahja I.M.a, Winata T.a, Darma Y.a
a Physics of Electronic Material Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung, 40132, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2017 IOP Publishing Ltd.We study the influence of Ti doping on the photodetection properties of zinc oxide (ZnO) thin films. The pure ZnO and ZnO:3%Ti (TZO) films were deposited on Si substrates by using DC-unbalanced magnetron sputtering. From the scanning electron microscopy (SEM) images, the TZO film grows more homogeneously in comparison with the pure ZnO structure. We suggest that Ti dopants play a role in uniformly distributing ZnO elements from the sputtering target to the Si substrate. The transmittance spectra of the Fourier transform infrared spectroscopy show a peak splitting of Zn-O stretching in the TZO film, which is also related to the dopant-modified film morphology. X-ray diffraction (XRD) spectra show that the Ti dopants also change the main ZnO crystal orientation from (0 0 2) to (1 0 3). The ZnO and TZO film-based photodetectors were fabricated by using a metal-semiconductor-metal planar configuration with Ag as the metal contact. Based on the I-V characteristics, Ti doping in the ZnO system reduces the dark current and induces the enhancement of the photo-to-dark-current ratio. Our study shows the important role of Ti doping on the improvement of photodetection performance.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]IV characteristics,Metal semiconductor metal,Planar configurations,Scanning electron microscopy image,Ti-doped zno,Transmittance spectra,Unbalanced magnetron sputtering,Zinc oxide thin films[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Photodetector,Ti-doped ZnO,Zinc oxide thin film[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1088/2053-1591/aa5773[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]