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Non-ohmic resistance effects of the AZO and TiZO as a blocking layer in dye-sensitized solar cells (DSSCs)
Arsyad W.O.S.a, Januari A.a, Jumaliaa, Ilmawati W.S.a, Usman I.a, Hidayat R.b
a Physics Department, Faculty of Mathematics and Natural Sciences, Halu Oleo University, South East Sulawesi, 93231, Indonesia
b Physics of Magnetism and Photonics, Physics Program Study, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology, West Java, 40132, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2018 World Scientific Publishing Company.Presented in this paper is the result of a study on the utilization of Al-doped ZnO (AZO) and Ti-doped ZnO (TiZO) as a blocking layer (BL) in Dye-Sensitized Solar Cells (DSSCs). The DSSCs structure was FTO/BL/TiO2/dye/electrolyte/Pt on FTO. The crystallinity and crystallite size of those BLs were shown to be affected by the dopant type and its concentration. From the photovoltaic characteristics of those DSSCs, the TiZO layer showed better contribution in enhancing the open voltage as a BL in comparison to the AZO. The effect of these layers on the solar cell characteristics in the fabricated DSSCs was found to be not merely due to the difference in their Ohmic resistance. There is also the contribution of back recombination kinetics from the photoexcited electrons via the dopant states in the AZO and TiZO layers, which are different among the layers due to the difference in dopant states distributions below their conduction bands.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Blocking layers,Charge carrier recombination,Ohmic resistance,Photoexcited electrons,Photovoltaic characteristics,Recombination kinetics,Ti-doped zno,TiZO[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]AZO,Charge carrier recombination,charge transfer,dye-sensitized solar cells,TiZO[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][{‘$’: ‘The authors acknowledge the support from the Ministry of Research and Technology of Indonesia through Program Hibah Bersaing Tahun 20152016.’}, {‘$’: ‘The authors acknowledge the support from the Ministry of Research and Technology of Indonesia through Program Hibah Bersaing Tahun 2015–2016.’}][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1142/S0218863518500194[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]