[vc_empty_space][vc_empty_space]
Optimization of surface passivation parameters in [147Pm]-Si planar p-n junction betavoltaic based on analytical 1-D minority carrier diffusion equation approaches
Rahastama S.a, Waris A.a, Viridi S.a, Iskandar F.a
a Department of Physics, Institut Teknologi Bandung, Bandung, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2019 Elsevier LtdRecombination of the carrier due to the surface state level traps could affect betavoltaic performance. Herein, we employed a theoretical 1-D carrier transport calculation to investigate the surface passivation effect in a planar [147Pm]-Si p-n junction betavoltaic cell and the results were verified using previous studies. In comparison to the ideal condition of the passivated surface, we predict a 10.74% power loss at the device, thus further research concerning the surface passivation layer for betavoltaic batteries might be necessary.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Betavoltaic,Electron hole pairs,Maximum power output,Minority carrier diffusion,Surface recombination velocities[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Betavoltaic,Electron-hole pairs,Maximum power output,Minority carrier diffusion equation,Surface recombination velocity[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text]This work is funded by the Ministry of Research, Technology, and Higher Education of the Republic of Indonesia in the framework of PMDSU research grant 2016, and supported by the Department of Physics, Institut Teknologi Bandung.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1016/j.apradiso.2019.03.030[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]