[vc_empty_space][vc_empty_space]
Two-stage s-band lna development using non-simultaneous conjugate match technique
Munir A.a, Taryana Y.b, Yunus M.c, Nusantara H.a, Effendi M.R.a
a Radio Telecommunication and Microwave Laboratory, School of Electrical Engineering and Informatics, Institut Teknologi Bandung, Bandung, 40132, Indonesia
b Research Center for Electronics and Telecommunication, Indonesian Institute of Sciences Jalan Sangkuriang – Komplek LIPI, Bandung, 40135, Indonesia
c Department of Electrical Engineering, Faculty of Engineering, University of Pakuan Jalan Pakuan, Bogor, 16143, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2019 Published by ITB Journal Publisher,.This paper presents the development of a two-stage low noise amplifier (LNA) operating at the S-band frequency that is implemented using the non-simultaneous conjugate match (NSCM) technique. The motivation of this work was to solve the issue of the gain of LNAs designed using the most commonly used technique, i.e. simultaneous conjugate match (SCM), which often produce an increase of other parameter values, i.e. noise figure and voltage standing wave ratio (VSWR). Prior to hardware implementation, the circuit simulation software Advanced Design System (ADS) was applied to design the two-stage S-band LNA and to determine the desired trade-off between its parameters. The proposed two-stage S-band LNA was deployed on an Arlon DiClad527 using a bipolar junction transistor (BJT), type BFP420. Meanwhile, to achieve impedances that match the two-stage S-band LNA circuit, microstrip lines were employed at the input port, the interstage, and the output port. Experimental characterization showed that the realized two-stage S-band LNA produced a gain of 22.77 dB and a noise figure of 3.58 dB at a frequency of 3 GHz. These results were 6.1 dB lower than the simulated gain and 0.76 dB higher than the simulated noise figure respectively.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Bipolar junction transistor (BJT),Impedance matching network,Microstrip line,Non SCM technique,S-band frequency,Two-stage low noise amplifier (LNA)[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.5614/itbj.ict.res.appl.2019.13.3.3[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]