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I-V properties of heterostructures of superconductor ferroelectric junction
Sujiono E.H.a, Fuad A.a, Saragi T.a, Arifin P.a, Barmawi M.a
a Laboratory of Electronic Material Physics (LEMP), Bandung Institute OfTechnology, Bandung, 40132, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 200 COPYRIGHT SPIE.We have grown a heterostructure of YBCO/STO/YBCO on (100) MgO substrate for fabrication of SXS junction. The epitaxial YBCO films were grown by MOCVD method, and the STO layer was deposited by unbalanced magnetron sputtering method. All of films are dominated by a-Axis oriented phases. The individual YBCO films revealed critical-current densities around 2.5 X 105 A/cm2 at 77 K. The resistive transition observed in the vertical transport devices is dominated by the X layer properties. These devices display RSJ-Type I-V characteristics and the values of IcRn significantly depend on the X layer thickness. The SXS junction with STO layer of 0.1, 0.2 and 0.3 micrometers have IcRn of 115, 90 and 42 (mu) V, respectively.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]IV characteristics,Layer thickness,MgO substrate,MOCVD methods,Resistive transition,Unbalanced magnetron sputtering,Vertical transports,YBCO film[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]MOCVD,STO,SXS devices,UBMS dc,YBCO[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text]This work was supported by Center Grant URGE Project, DGHE, The Ministry of Education and Culture, The Republic of Indonesia, under contract no.: 008/CG/III/LJRGE/1997. One of the authors (E.H.S) would like to thank The Habibie Center for the scholarship.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1117/12.408313[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]