[vc_empty_space][vc_empty_space]
Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula
Noor F.A.a, Syuhada I.a, Winata T.a, Yu F.b, Fatahilah M.F.b, Wasisto H.S.b, Khairurrijal K.a
a Department of Physics, Faculty of Mathematics and Natural Sciences, Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung, Indonesia
b Institute of Semiconductor Technology, Technical University of Braunschweig, Brunswick, Germany
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2013 IEEE.In this report, we study nonlinear electrical behaviors found in vertical-architecture transistors based on wrap-around-gated gallium nitride (GaN) nanowires (NWs) by extending a one-dimensional case of the Landauer-Büttiker formula. Here, the GaN NWs are considered ‘almost’ one-dimensional ideal wires connecting the drain and source terminals, with the gate terminal serving to control the flowing current. Unlike previous models, which require several parameters and complex calculations, our proposed model only needs three parameters and simple calculations to match the experimental data. With this model, we confirm that the maximum current before saturation is a consequence of quasi-ballistic drain current. Thus, electron mobility has no effect in this device. Using a simple formulation, we discuss gating hysteresis in the device that is mediated by the selected oxide layer interface. We show that the memory effect of the device is attributed to time-delay current. The shorter gate length increases the transmission coefficient. As a result, the model can be employed to predict the next-generation NW transistor performance.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Electrical behaviors,Gallium nitride nanowires,Nonlinear electrical behavior,Quasi-ballistic,Three parameters,Transistor performance,Transmission coefficients,Vertical architectures[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Conductance,density of states,GaN nanowire transistor,nonlinear drain current,time-delay current,transmission coefficient[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][{‘$’: ‘This work was supported in part by the Institut Teknologi Bandung (ITB) through the Riset Luar Negeri ITB 2018 Research Grant, and in part by the Lower Saxony Ministry for Science and Culture [Niedersächsischen Ministerium für Wissenschaft und Kultur (N-MWK)] within the group of Laboratory for Emerging Nanometrology (LENA)-OptoSense.’}, {‘$’: ‘This work was supported in part by the Institut Teknologi Bandung (ITB) through the Riset Luar Negeri ITB 2018 Research Grant, and in part by the Lower Saxony Ministry for Science and Culture [Nieders?chsischen Ministerium f?r Wissenschaft und Kultur (N-MWK)] within the group of Laboratory for Emerging Nanometrology (LENA)-OptoSense.’}][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1109/ACCESS.2020.3047498[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]