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Design and Analysis of 2.4 GHz GaN HEMT Class e Switching RF Power Amplifier
Oktani D.a, Siregar L.a, Alam B.R.b
a Teaching Factory of Manufacturing Electronics, Politeknik Negeri Batam, Batam, Indonesia
b School of Electrical Engineering and Informatic, Institut Teknologi Bandung, Bandung, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2019 IEEE.RF power amplifier based on the FET gate switching has been designed and simulated at 2.4GHz operation for IoT application. The switching RF power amplifier for transmitter using a GaN HEMT transistor switched by 2.4 GHz pulse and supposed to work as a class-E RF amplifier where a capacitor shunted between drain and grounded source of the FET worked half-periodically building load voltage based on capacitor voltage build-up and current discharging, respectively. The simulation has been using Keysight ADS Harmonic Balance simulator. The input pulse source voltage has been varied by 1V increment from 2V to 5V at -3.2V gate voltage bias. The load continous output power, PAE and gain have been observed at those pulse gate switching voltage. Pulsed switching at 4V-peak and 25 dBm 2.4GHz pulse source has resulted 43 dBm continous RF signal power at the output or equivalent to 22W power with 18dB gain and PAE of 64.7%.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Capacitor voltages,Class E,Class E switching,Design and analysis,Gan hemt transistors,GaN HEMTs,Harmonic balance simulators,RF power amplifiers[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Class E,Galium Nitride,GaN HEMT,Switching RF power amplifier[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1109/ISESD.2019.8909401[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]