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A First Principle Study of the Electronic Structures of Transition Metal Doped GaN for Diluted Magnetic Semiconductor Applications
Romanudhin R.a, Prabowo W.A.E.b,c, Fathurrahman F.b, Melati A.a, Dipojono H.K.b
a Department of Physics, Faculty of Science and Technology, Sunan Kalijaga State Islamic University, Yogyakarta, 55281, Indonesia
b Department of Engineering Physics, Faculty of Industrial Technology, Bandung Institute of Technology, Bandung, 40132, Indonesia
c Department of Computer Science, Faculty of Computer Science, Dian Nuswantoro University, Semarang, 50131, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2017 The Authors.Gallium nitride (GaN) is a well-known non-magnetic semiconductor material. However it can be transformed into magnetic material, i.e. diluted magnetic semiconductor (DMS), by adding magnetic materials as impurities. Since transition metal elements have magnetic properties, hence can be used as impurity elements for forming DMS. This paper reports our investigation of the electronic structure of GaN doped with transition metal elements (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) by using density functional theory (DFT). Based on the results, GaN-Sc; GaN-Zn and GaN-Cu have no magnetic characteristic. GaN-Ti; GaN-V; GaN-Fe, GaN-Cr; GaN-Co; GaN-Ni; GaN-Fe have a magnetic characteristic. GaN-Co and GaN-Fe are the candidate to apply to DMS, because they have magnetic and semiconductor properties. These two properties are the main character of DMS.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]First-principle study,Gallium nitrides (GaN),Impurity element,Magnetic characteristic,Semiconductor properties,Transition metal elements[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]density functional theory,diluted magnetic semiconductor,electronic properties,GaN,magnetic properties,transition metal[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1016/j.proeng.2017.03.025[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]