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The effects of nitrogen concentration in TiNx and the thickness of HfSiOxN to the tunneling currents in isotropic TiNx/HfSiOxN/SiO2/Si(100) capacitors
a Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]In this paper, we have computed electron tunneling currents in TiNx/HfSiOxN/SiO2/Si(100) MOS capacitors by including a coupling term between transverse and longitudinal kineticenergies which is represented by an electron phase velocity in the gate. The effective mass of thesubstrate is considered as an isotropic mass. The transmittance was analytically calculated byemploying an Airy-wavefunction approach, and the obtained transmittance was then utilized tocalculate the tunneling current for different nitrogen compositions in the TiNx metal gate and theequivalent oxide thicknesses (EOTs) of HfSiOxN. It was shown that the tunneling current reducesconsiderably as the nitrogen composition of the TiNx metal gate decreases. It was also shown that theincrease in the EOT reduces the tunneling current. In addition, the tunneling current shows anoscillatory behavior at high oxide voltages. © (2014) Trans Tech Publications, Switzerland.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Coupling terms,Electron velocity,High-K gate stacks,Isotropic mass,Nitrogen composition,Nitrogen concentrations,Oxide thickness,Tunneling current[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Electron velocity,High-k gate stack,Isotropic mass,Tunneling current[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.4028/www.scientific.net/AMM.481.121[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]