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Low temperature graphene growth effort on corning glass substrate by using vhf-ip hwc-pecvd
Yusuf M.A.a,b, Rosikhin A.a, Malago J.D.b, Noor F.A.a, Winata T.a
a PECVD Laboratory, Physics of Electronics Materials Research Group, Physics Department, Bandung Institute of Technology, Bandung, 40132, Indonesia
b Physics of Materials Laboratory Physics Department, Mathematics and Natural Science Faculty, State University of Makassar, Makassar, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2019 Trans Tech Publications Ltd, Switzerland.One promising method for growing carbon-based materials, especially for electronics and optoelectronics application, is PECVD (Plasma Enhanced Chemical Vapor Deposition). In addition to the large-area thin film obtained, this method also requires relatively lower growth temperature. By modifying the PECVD reactor through the application of Hot-Wire Cell (HWC) placed between two electrodes (called In Plasma, IP), and plasma generator frequency of 70 MHz which is categorized as Very High Frequency (VHF), graphene flakes have been successfully grown by using methane (CH4) gas as precursor at pressure 300 mTorr and substrate temperature of 275oC on corning glass substrate. This result indicates that this method is potentially to grow graphene at lower temperature by adjusting several growth parameters, especially temperature of hot wire cell that plays important role in the deposition process. It should be noted that important factor that greatly determined the successful of graphene flakes growth was the use of metal catalyst in the form of very thin film. In this research, silver was used as metal catalyst which was prepared by evaporation method and then annealed at 600oC for 30-60 minutes.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Carbon based materials,Deposition process,Evaporation method,Growth parameters,Hot wires,Lower temperatures,Substrate temperature,Very high frequency[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Amorphous-carbon,Catalyst,Graphene flakes,Hot-wire cell,PECVD,VHF[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.4028/www.scientific.net/MSF.966.100[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]