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Low pressure MOCVD growth of GaSb using trisdimethylaminoantimony (TDMASb)
Sustini E.a, Sugiantoa, Sani R.A.a, Latunuwe A.a, Arifin P.a, Barrnawi M.a
a Laboratory of Electronic Material Physics, Department of Physics, Institute of Technology, Bandung, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2000 IEEE.The growth of nominally un-doped GaSb layers on GaAs substrates by low pressure MOCVD was investigated. The MOCVD reactor is a vertical type operating at growth pressure of about 50 torr. A flow guide was used to guide gas flow inside the reactor in order to obtain uniform layers. Trimethylgallium (TMGa) and trisdimethylaminoantimony (TDMASb) were used as precursors. Growth temperatures were in the range of 475-580°C, while the VIII ratio was varied between 0.4-2.0. The effect of growth temperature and V/III ratio on the growth rate, crystallographic quality, surface morphology and electronic properties were investigated. It was found that the optimum growth conditions occur at very narrow growth temperatures, in the range of 530-540 °C with Villi ratios of around 1.0. The growth rate significantly depends on the growth temperature. The grown layer was p-type and -dominated by (200) and (400) X-ray diffraction reflections with the highest mobility of 616 cm2V-1s-1 at hole concentration of 4.3 × 1017 cm-3.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Crystallographic quality,GaAs substrates,Growth pressure,Low-pressure MOCVD,Optimum growth conditions,Trimethyl gallium,Vertical-type,X-ray diffraction reflections[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1109/COMMAD.2000.1022906[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]