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Modeling of tunneling currents on Al/SiO2/p-Si MOS capacitors with nanometer-thick oxides
Mulyanti B.a, Hasanah L.a, Pantjawati A.B.a, Murakami H.b, Khairurrijalc
a Department of Electrical Engineering Education, Faculty of Technology and Vocational Education, Indonesia University of Education (UPI), Indonesia
b Graduate School of Advanced Sciences of Matter, Hiroshima University, Japan
c Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]In this paper, the tunneling current calculations of isotropic and anisotropic-isotropic electron effective mass on Al/SiO2/p-Si MOS involving coupling effect are presented. The results indicated that the impact of tunneling calculation involving coupling effect is that electron velocity acts as parameter of calculation, especially in inversion condition. In this condition, the difference between anisotropic-isotropic and isotropic calculation results tends to be greater when the electron velocity increases. The result of anisotropic-isotropic model is closer to the theory than that of isotropic result. In addition, the coupling effect makes the values of tunneling current more sensitive to the electron effective mass. © 2013 IEEE.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]anisotropic,Calculation results,Effective mass,Electron effective mass,Electron velocity,Inversion conditions,isotropic,Tunneling current[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Al/SiO2/p-Si MOS,anisotropic,effective mass,isotropic,tunneling current[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1109/ICICI-BME.2013.6698505[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]