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Study of Mg-doped GaN thin films grown on c-plane sapphire substrate by plasma assisted metalorganic chemical vapor deposition method
Subagio A.a,b, Sutanto H.a,b, Supriyanto E.a,c, Budiman M.a, Arifin P.a, Sukirnoa, Barmawi M.a
a Laboratory for Electronic Material Physics, Dept. of Physics, ITB, Indonesia
b Dept. of Physics, Diponegoro University, Indonesia
c Dept. of Physics, Jember University, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]Mechanism of doping of Mg in GaN thin film grown on c-plane sapphire substrate by plasma assisted-metalorganic chemical vapor deposition (PA-MOCVD) method have been investigated. The growth was carried out at temperature of 680°C, which flow rate of Cp2Mg as dopant source was varied of 0.003; 0.006; 0.009 and 0.012 sccm. The Van der Pauw technique, X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to characterize their electric, crystallographic and morphology properties. Hole concentrations of up to 1019cm-3 have been observed for Mg-doped GaN films without any post-growth annealing. The XRD analysis showed change of the FWHMs for the (0002) orientation plane from Mg-doped GaN films. The difference of the atomic radius between Ga and Mg atoms causes lattice distortion in crystal. This lattice distortion generates dislocation and causes growth of the layer to be three-dimensional as showed on SEM images. © 2008 American Institute of Physics.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Mg-doped GaN,PA-MOCVD,SEM,Van der pauw technique,XRD[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1063/1.2906072[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]