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Oxidation of sputtered Zr thin film on Si substrate
Kurniawan T.a, Cheong K.Y.a, Razak K.A.a, Lockman Z.a, Ahmad N.b
a Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia
b Faculty of Industrial Technology, Institute of Technology Bandung, Labtek VI, Indonesia
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]Oxidation of sputtered Zr thin film on Si substrate has been investigated by varying oxidation times (5-60 min) at 500 °C. Fourier transform infrared spectroscopy indicated the existence of ZrO 2 by showing spectra of Zr-O. Vibration mode of Si-O and Zr-O-Si are also detected for all samples oxidized at different duration. This suggested the existence of SiO x and Zr x Si y O z compounds and they might be located at interfacial layers (ILs) between ZrO 2 and Si. Cross-sectional image of high resolution transmission electron microscopy taken from 60-min oxidized sample showed that both ZrO 2 and IL thickness is ~3.5 nm. Time-of-flight secondary-ion-mass spectroscopy suggested that Zr x Si y O z may be formed after oxidized for 15 min. The proposed IL is consisted of a mixture of Zr x Si y O z and SiO x . A physical model has been established to explain the observation. Electrical characterization shows that capacitance-voltage curves have small hysteresis and their flatband voltages are shifted to a negative bias. Effective dielectric constant values of the investigated oxides are in the range of 4.22-5.29. Leakage current density-breakdown voltage characteristic shows that 5-min oxidized sample has the lowest dielectric breakdown voltage if compared with the other samples. © 2010 Springer Science+Business Media, LLC.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Breakdown voltage,Capacitance-voltage curve,Cross sectional image,Dielectric breakdown voltages,Effective dielectric constants,Electrical characterization,Flat-band voltage,Interfacial layer,Mass spectroscopy,Negative bias,Oxidation time,Physical model,Si substrates,Time of flight,Vibration modes[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1007/s10854-010-0103-1[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]