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Liquid phase epitaxy of si-doped A1N at 13000°c in Ga-Al melt
Setiawan A.R.a, Adachi M.b, Fukuyama H.b
a Research groups of Materials Science and Engineering, Institute of Technology Bandung, Indonesia
b Institute of Multidisciplinary Research for Advanced Materials, IMRAM, Tohoku University, Japan
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]In the present study we have successfully grown Si-doped AlN developed by solution growth technique using Ga-Al melt as a solvent under nitrogen atmosphere at 1300 °C. Si doping was introduced to the Ga-Al melt by adding pure Si metal. To allow homoepitaxial growth during solution growth experiment, sapphire substrate were nitrided with precise control to produce hiqh quality single crystalline AlN films with low dislocation density. With the help of AlN film template from above methods, we have successfully grown Si-doped AlN single crystalline layer with a flat surface and almost free from cracks. The full width at half maximum (FWHM) of x-ray rocking curve values for (0002) and (10-12) diffraction from the Si-doped AlN film were 43,2 and 594 arcsec, respectively. © (2014) Trans Tech Publications, Switzerland.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Homoepitaxial growth,Low-dislocation density,Nitrogen atmospheres,Rocking curves,Sapphire substrates,Solution growth technique,X ray rocking curve,XRD[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Aluminium nitride,FWHM,Liquid phase epitaxy,Nitridation,Rocking curve,XRD[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.4028/www.scientific.net/AMR.845.3[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]