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Post-annealing effects on excitonic states and defects in nanostructured Ti-doped ZnO thin films
Darma Y.a, Nurfani E.b, Purbayanto M.A.K.a, Widita R.a, Rusydi A.c, Takase K.
a Department of Physics, Institut Teknologi Bandung, West Java, Bandung, 40132, Indonesia
b Materials Engineering Program, Institut Teknologi Sumatera, Jati Agung, Lampung, 35365, Indonesia
c Singapore Synchrotron Light Source, National University of Singapore, Singapore, 117603, Singapore
d College of Science and Technology, Nihon University, Chiyoda, Tokyo, 101-0062, Japan
[vc_row][vc_column][vc_row_inner][vc_column_inner][vc_separator css=”.vc_custom_1624529070653{padding-top: 30px !important;padding-bottom: 30px !important;}”][/vc_column_inner][/vc_row_inner][vc_row_inner layout=”boxed”][vc_column_inner width=”3/4″ css=”.vc_custom_1624695412187{border-right-width: 1px !important;border-right-color: #dddddd !important;border-right-style: solid !important;border-radius: 1px !important;}”][vc_empty_space][megatron_heading title=”Abstract” size=”size-sm” text_align=”text-left”][vc_column_text]© 2019 IOP Publishing Ltd.We study the effects of post-annealing treatments on excitonic states and defects of nanostructured Ti-doped ZnO thin films grown by room-temperature magnetron sputtering technique. Here, the as-grown samples were annealed by varying the annealing environment, time, and temperature. We found that the higher excitonic emission was at 600 °C under N2 environment for 30 min. The excitonic states are analyzed by using spectroscopic ellipsometry, photoluminescence, and ultraviolet-visible absorption spectroscopy. Through critical point analysis of the complex dielectric function from spectroscopic ellipsometry, the energy of exciton is redshifted from 3.49 eV to 3.36 eV and the increase of excitonic transition is observed upon the annealing treatment. The weak excitonic transition in the as-grown sample is mainly due to the oxygen vacancies that promote electronic screening effect. The contribution of oxygen vacancies is confirmed by the presence of green luminescence (∼2.5 eV) and space-charge-limited current regime from electrical properties measurements. This work is very important for tunable optoelectronic devices based on the doped ZnO system.[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Author keywords” size=”size-sm” text_align=”text-left”][vc_column_text]Complex dielectric functions,Critical point analysis,Post annealing treatment,Post-annealing effect,Space charge limited current regimes,Ti doping,Ultraviolet-visible absorption spectroscopy,ZnO thin film[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Indexed keywords” size=”size-sm” text_align=”text-left”][vc_column_text]exciton,point defects,post-annealing treatment,Ti doping,ZnO thin film[/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”Funding details” size=”size-sm” text_align=”text-left”][vc_column_text][/vc_column_text][vc_empty_space][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][vc_empty_space][megatron_heading title=”DOI” size=”size-sm” text_align=”text-left”][vc_column_text]https://doi.org/10.1088/2053-1591/ab1a03[/vc_column_text][/vc_column_inner][vc_column_inner width=”1/4″][vc_column_text]Widget Plumx[/vc_column_text][/vc_column_inner][/vc_row_inner][/vc_column][/vc_row][vc_row][vc_column][vc_separator css=”.vc_custom_1624528584150{padding-top: 25px !important;padding-bottom: 25px !important;}”][/vc_column][/vc_row]